Physics Department Personnel

Dr. George Goldsmith

Professor Emeritus of Physics

617-552-3879
Higgins Hall 330J
goldsmig@bc.edu

Education

• A & S, Ph.D., Physics, Purdue University, 1955
  
• A & S, M.S., Chemistry, Purdue University, 1948
  
• B.S., Chemistry, University of Vermont, 1944

Areas of Research
Modulation spectroscopy of elementary , III-V, semiconductors heterojunctions, organic semiconductors, GaAs/AlGaAs, InP, InAlAs properties; optical transitions within superlattice structures; photoconductivity, luminescence/excitation spectra.

Selected Publications

• "Role of Metal Phthalocyanine in Redox Complex Conductivity of Polyaniline and Aniline Black," Francis P. Xavier, Anto Regis Inigo, and George J. Goldsmith, J. Porphyrins Phthalocyanines 3, 1 (1999).
• "Copper Phthalocyanines as an Efficient Dopant in Development of Solar Cells," Anto Regis Inigo, Francis P. Xavier, and George J. Goldsmith, Mater. Res. Bull. (India) 12, 539 (1997).
• "Single Crystal Growth of Organic Photoconductors: Phthalocyanine," Francis P. Xavier and George J. Goldsmith, Bull. Mater. Sci. (India) 19, 429 (1996).
• "Photoconductivity of Iodine-Doped Single Crystals of Phthalocyanine," Francis P. Xavier and George J. Goldsmith, Bull. Mater. Sci. (India) 18, 283 (1995).
• "A Simple Method for Determining Band-Gap Energies from Inhomogeneous Electric Field Electroreflection Spectra Applied to GaAs," H. Poras, H. Wang, G.J. Goldsmith, and N. Pan (Raytheon), J. Appl. Phys. 75(12), 8198 (1994).
• "Depletion Layer Overlap in Thin Epitaxial Layers of GaAs," H. Poras, G.J. Goldsmith, N. Pan (Raytheon). Submitted to Appl. Phys. Lett. (in revision).
• "Identification of a Below Band Gap Feature Present in Modulation Spectra of Epitaxial GaAs Deposited on a Semi-Insulating Substrate," H. Poras, G.J. Goldsmith, N. Pan (Raytheon). Submitted to J. Appl. Phys. (in revision).

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