Physics Department Personnel

Dr. George Goldsmith

Professor Emeritus of Physics

617-552-3879
Higgins Hall 330J
goldsmig@bc.edu

Education

• A&S, PhD, Physics, Purdue University, 1955
  
• A&S MS, Chemistry, Purdue University, 1948
  
• BS, Chemistry, University of Vermont, 1944

Areas of Research
Modulation spectroscopy of elementary , III-V, semiconductors heterojunctions, organic semiconductors, GaAs/AlGaAs, InP, InAlAs properties; optical transitions within superlattice structures; photoconductivity, luminescence/excitation spectra.

Recent Publications

• Role of metal phthalocyanine in redox complex conductivity of polyaniline and aniline black., Francis P. Xavier, Anto Regis Inigo, and George J. Goldsmith, Journal of Porphyrins and Phthalocyanines , 3, 1 (1999).
  Copper Phthalocyanines as an efficient dopant in development of solar cells,
  
• Anto Regis Inigo, Francis P. Xavier, and George J. Goldsmith, Materials Research Bulletin (India), 12, 539, (1997).
  
• Single crystal growth of organic photoconductors:phthalocyanine:, Francis P. Xavier and George J. Goldsmith, Bulletin of Materials Science (India), 19, 429 (1996)
  
• Photoconductivity of iodine-doped single crystals of phthalocyanine, Francis P. Xavier and George J. Goldsmith, Bulletin of Materials Science (India), 18, 283 (1995).
  
• A simple method for determining band-gap energies from inhomogeneous electric field electroreflection spectra applied to GaAs, H. Poras, H. Wang, G.J. Goldsmith and N. Pan (Raytheon), Journal of Applied Physics , vol. 75, (12), p.8198 (1994).
  
• Depletion layer overlap in thin epitaxial layers of GaAs . H. Poras, G.J. Goldsmith, N. Pan (Raytheon) Submitted to
  
• Applied Physics Letters (in revision).
  
• Identification of a below band gap feature present in modulation spectra of epitaxial GaAs deposited on a semi-insulating substrate. H. Poras, G.J. Goldsmith, N. Pan (Raytheon) Submitted to Journal of Applied Physics (in revision).